EXAFS investigations on amorphous GaSe9 thin films

被引：1
|
作者：
Siqueira, M. C. [1 ]
Machado, K. D. [2 ]
Maia, R. N. A. [2 ]
Araujo, R. M. T. [2 ]
Serbena, J. P. M. [2 ]
Hummelgen, I. A. [2 ]
Stolf, S. F. [3 ]
机构：
[1] CIC, Fac Tecnol SENAI, R Senador Accioly Filho 298, BR-81310000 Curitiba, Parana, Brazil
[2] Univ Fed Parana, Dept Fs, Ctr Politecn, BR-81531990 Curitiba, Parana, Brazil
[3] UNIOESTE, Ctr Engn & Ciencias Exatas, BR-85903000 Toledo, PR, Brazil
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2016年 / 447卷
关键词：
Amorphous materials; Semiconductors; Thin films; Evaporation; XAFS; X-RAY-ABSORPTION; FINE-STRUCTURE; OPTICAL-CONSTANTS; CRYSTAL;
D O I：
10.1016/j.jnoncrysol.2016.05.044
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structural properties of amorphous GaSe9 thin films produced by vacuum evaporation were investigated using the EXAFS technique and the cumulant expansion method. Structural parameters such as average coordination numbers and interatomic distances, disorder and asymmetry of the partial pair distribution functions g(ij)(r) were obtained and compared to those found in-the amorphous GaSe9 alloy used as precursor in the evaporation technique. Results indicate that structural units present in GaSe9 evaporate without dissociation, showing the stability of this alloy. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 237
页数：5
相关论文
共 50 条
  • [41] Optical properties of ZnO thin films obtained by heat treatment of Zn thin films on amorphous SiO2 substrates and single crystalline GaSe lamellas
    Caraman, Iuliana
    Dmitroglo, Liliana
    Evtodiev, Igor
    Leontie, Liviu
    Untila, Dumitru
    Hamzaoui, Saad
    Zerdali, Mokhtar
    Susu, Oana
    Bulai, Georgiana
    Gurlui, Silviu
    THIN SOLID FILMS, 2016, 617 : 103 - 107
  • [42] Growth, electrical and structural characterization of β-GaSe thin films
    M. Parlak
    A. F. Qasrawi
    Ç Erçelebi
    Journal of Materials Science, 2003, 38 : 1507 - 1511
  • [43] Growth, electrical and structural characterization of β-GaSe thin films
    Parlak, M
    Qasrawi, AF
    Erçelebi, Ç
    JOURNAL OF MATERIALS SCIENCE, 2003, 38 (07) : 1507 - 1511
  • [44] Electrical and optical properties in sputtered GaSe thin films
    Ohyama, M
    Fujita, Y
    SURFACE & COATINGS TECHNOLOGY, 2003, 169 : 620 - 623
  • [45] STRUCTURAL PROPERTIES OF VACUUM DEPOSITED GASE THIN FILMS
    THOMAS, MB
    THIN SOLID FILMS, 1971, 8 (04) : 273 - &
  • [46] XANES, EXAFS and photoluminescence investigations on the amorphous Eu:HfO2
    Sharma, Aditya
    Varshney, Mayora
    Shin, Hyun-Joon
    Chae, KeunHwa
    Won, Sung Ok
    SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2017, 173 : 549 - 555
  • [47] STUDY ON THE SHORT-RANGE ORDER STRUCTURES OF FE-GE AMORPHOUS THIN-FILMS BY EXAFS
    WANG, WC
    CHEN, Y
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (02): : 541 - 549
  • [48] INVESTIGATIONS OF MAGNETOSTRICTION IN CO0.86TI0.14 AMORPHOUS THIN-FILMS
    ZUBEREK, R
    SZYMCZAK, H
    SURAN, G
    OUNADJELA, K
    THIN SOLID FILMS, 1990, 188 (01) : 1 - 5
  • [49] XPS investigations of TiOySz amorphous thin films used as positive electrode in lithium microbatteries
    Lindic, MH
    Martinez, H
    Benayad, A
    Pecquenard, B
    Vinatier, P
    Levasseur, A
    Gonbeau, D
    SOLID STATE IONICS, 2005, 176 (17-18) : 1529 - 1537
  • [50] TEM INSITU INVESTIGATIONS OF THE CRYSTALLIZATION BEHAVIOR OF AMORPHOUS-SILICON THIN-FILMS
    REICHE, M
    HOPFE, S
    ULTRAMICROSCOPY, 1990, 33 (01) : 41 - 50
12345