EXAFS investigations on amorphous GaSe9 thin films

被引：1

作者：

Siqueira, M. C. ^{[1
]}

Machado, K. D. ^{[2
]}

Maia, R. N. A. ^{[2
]}

Araujo, R. M. T. ^{[2
]}

Serbena, J. P. M. ^{[2
]}

Hummelgen, I. A. ^{[2
]}

Stolf, S. F. ^{[3
]}

机构：

[1] CIC, Fac Tecnol SENAI, R Senador Accioly Filho 298, BR-81310000 Curitiba, Parana, Brazil

[2] Univ Fed Parana, Dept Fs, Ctr Politecn, BR-81531990 Curitiba, Parana, Brazil

[3] UNIOESTE, Ctr Engn & Ciencias Exatas, BR-85903000 Toledo, PR, Brazil

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2016年 / 447卷

关键词：

Amorphous materials; Semiconductors; Thin films; Evaporation; XAFS; X-RAY-ABSORPTION; FINE-STRUCTURE; OPTICAL-CONSTANTS; CRYSTAL;

D O I：

10.1016/j.jnoncrysol.2016.05.044

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural properties of amorphous GaSe9 thin films produced by vacuum evaporation were investigated using the EXAFS technique and the cumulant expansion method. Structural parameters such as average coordination numbers and interatomic distances, disorder and asymmetry of the partial pair distribution functions g(ij)(r) were obtained and compared to those found in-the amorphous GaSe9 alloy used as precursor in the evaporation technique. Results indicate that structural units present in GaSe9 evaporate without dissociation, showing the stability of this alloy. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：233 / 237

页数：5

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