INFLUENCE OF DEPOSITION TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ELECTROCHEMICALLY NANOSTRUCTURED ZnO FILMS

被引:0
|
作者
Lovchinov, Konstantin [1 ]
Marinov, Georgi [1 ,2 ]
Petrov, Miroslav [3 ]
Tyutyundzhiev, Nikolay [3 ]
Alexieva, Gergana [4 ]
Babeva, Tsvetanka [1 ]
机构
[1] Bulgarian Acad Sci, Inst Opt Mat & Technol Acad J Malinowski, Acad G Bonchev St,Bl 109, Sofia 1113, Bulgaria
[2] TASC Lab, 2 Ivan Peev Marusha St, Pravetz, Bulgaria
[3] Bulgarian Acad Sci, Inst Elect, 72 Tsarigradsko Shosse Blvd, Sofia 1784, Bulgaria
[4] Sofia Univ St Kliment Ohridski, Fac Phys, Dept Solid State Phys & Microelect, 5 J Bourchier Blvd, Sofia 1164, Bulgaria
来源
关键词
ZnO; electrochemical deposition; nanostructured films; optical and structural properties; THIN-FILMS; ZNCL2; CONCENTRATION; GROWTH; ENHANCEMENT;
D O I
10.7546/CRABS.2020.02.06
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The influence of the deposition temperature (in the range from 50 to 80 degrees C) of the aqueous solution containing ZnCl2 and KCl on the properties of ZnO films obtained by electrochemical deposition on SnO2 covered glass substrates is studied. Through the implementation of X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-VIS-NIR and photoluminescence spectroscopy and optical profilometry, the temperature dependence of ZnO films properties is revealed. The polycrystalline status of the films is confirmed at all deposition temperatures through the obtained characteristic X-ray reflexes of the ZnO films. The SEM pictures show that the ZnO films deposited at lower temperature comprise nano-grains that transform in nano-walls with increasing the deposition temperature. With a further increase in temperature to 80 degrees C the deposited layers consist mainly of nano-rods. Further, it is demonstrated that the deposition temperature impacts the reflectance and transmittance spectra and haze ratio of the ZnO layers. The high values of the diffuse reflectance and transmittance in the spectral range from 350 to 800 nm could be beneficial for application of similar films as rear contacts of thin films solar cells.
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收藏
页码:190 / 196
页数:9
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