Wavelength-stabilized tapered laser diodes in an external Talbot cavity: simulations and experiments

被引：0

作者：

Paboeuf, David ^{[1
]}

Lucas-Leclin, Gaelle ^{[1
]}

Georges, Patrick ^{[1
]}

Michel, Nicolas ^{[2
]}

Krakowski, Michel ^{[2
]}

Lim, Jun Jun ^{[3
]}

Sujecki, Slawomir ^{[3
]}

Larkins, Eric ^{[3
]}

机构：

[1] Univ Paris 11, CNRS, Lab Charles Fabry, Inst Opt, Campus Polytech,RD128, F-91127 Palaiseau, France

[2] Alcatel Thales III V Lab, F-91767 Palaiseau, France

[3] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII | 2009年 / 7198卷

关键词：

Bragg gratings; semiconductor laser array; Talbot effect; laser modeling; HIGH-POWER; ARRAY;

D O I：

10.1117/12.808219

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present the experimental and theoretical evaluation of the coherent combining of an array of index-guided tapered laser diodes in an external Talbot cavity. A theoretical model taking into account the propagation inside the semiconductor device has been developed to determine the cavity spatial modes. In parallel, experiments have been realized with 10 emitters in a compact setup and a volume Bragg grating as the external mirror. 1.7 W have been obtained at 976 nm for the in-phase mode in a narrow laser line (<0.1 nm).

引用

页数：10

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