Distributed ESD Protection Network for Millimetre-Wave RF Applications

被引：0

作者：

Dong, Aihua ^{[1
]}

Parthasarathy, Srivatsan ^{[2
]}

Salcedo, Javier A. ^{[2
]}

Li, Hang ^{[1
]}

Hajjar, Jean-Jacques ^{[2
]}

Sundaram, Kalpathy ^{[1
]}

He, Linfeng ^{[1
]}

Luo, Sirui ^{[2
]}

机构：

[1] Univ Cent Florida, Elect & Comp Engn, 4000 Cent Florida Blvd, Orlando, FL 32816 USA

[2] Analog Devices Inc, 804 Woburn St, Wilmington, MA 01887 USA

来源：

2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年

关键词：

electrostatic discharges (ESDs); RF; Millimeter-Wave (mm-wave); Holding Voltage; TLP; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ESD protection is critical to RF (Radio Frequency) circuits. However, linearity and parasitic capacitance that ESD protection devices present adversely affect the performance of such circuits. To address challenges in millimeter-wave RF 110 ESD protection, a robust ESD solution with adjustable working frequency is proposed. The design methodology is demonstrated through an example design. S-parameters characterization and ESD test using TLP electrical stress are presented to verify the proposed design.

引用

页数：5

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