Signature of an intrinsic point defect in GaNxAs1-x -: art. no. 033203

被引：45
|
作者：
Thinh, NQ [1 ]
Buyanova, IA
Hai, PN
Chen, WM
Xin, HP
Tu, CW
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.63.033203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The first experimental signature of an intrinsic defect in GaNAs is provided from an optically detected magnetic resonance study. The resolved central hyperfine structure identifies the defect with a nuclear spin I =3/2, containing either an Asc, antisite or a Ga interstitial. From the strength of the hyperfine interaction and the growth conditions, a complex involving the As-Ga antisite seems to be a more likely candidate.
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页数：4
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