Signature of an intrinsic point defect in GaNxAs1-x -: art. no. 033203

被引：45

作者：

Thinh, NQ ^{[1
]}

Buyanova, IA

Hai, PN

Chen, WM

Xin, HP

Tu, CW

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.63.033203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first experimental signature of an intrinsic defect in GaNAs is provided from an optically detected magnetic resonance study. The resolved central hyperfine structure identifies the defect with a nuclear spin I =3/2, containing either an Asc, antisite or a Ga interstitial. From the strength of the hyperfine interaction and the growth conditions, a complex involving the As-Ga antisite seems to be a more likely candidate.

引用

页数：4

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