Electrical and structural properties of annealed epitaxial CeO2 films on Si(111) substrates

被引：0
|
作者：
Morshed, AH [1 ]
Tomita, M [1 ]
ElMasry, N [1 ]
McLarty, P [1 ]
Parikh, NP [1 ]
Bedair, SM [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
EPITAXIAL OXIDE THIN FILMS II | 1996年 / 401卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
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页码：121 / 126
页数：6
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