Flexible, Dopant Free a-Si:H Solar Cell

被引：0

作者：

Ore, Erenn ^{[1
]}

Amaratunga, Gehan ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge, England

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

amorphous silicon; dopant free; flexible; solar cell; PHOTOVOLTAIC CELL; DESIGN;

D O I：

10.1109/pvsc40753.2019.8981172

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Dopant free thin film solar cells with the common structure of ZnO:Al / MoOx / a- Si:H / LiF / Al are fabricated directly on flexible, transparent substrates. All the layers, except the a-Si:H layer, are deposited by simple, low temperature physical vapour deposition methods. An open circuit voltage of 0.764V and a short circuit current density of 11.31 mA/cm (2) are measured under AM1.5 irradiance. The proof of concept for flexible, dopant free a-Si:H solar cell demonstrated here is a step forward towards processing cost-effective, flexible and lightweight thin film solar cells.

引用

页码：1135 / 1138

页数：4

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