Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale

被引:8
|
作者
Schultheiss, Jan [1 ]
Lysne, Erik [1 ]
Puntigam, Lukas [2 ]
Schaab, Jakob
Bourret, Edith [3 ]
Yan, Zewu [3 ,4 ]
Krohns, Stephan [2 ]
Meier, Dennis [1 ]
机构
[1] Norwegian Univ Sci & Technol NTNU, Dept Mat Sci & Engn, N-7034 Trondheim, Norway
[2] Univ Augsburg, Expt Phys 5, D-86159 Augsburg, Germany
[3] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Swiss Fed Inst Technol, Dept Phys, CH-8093 Zurich, Switzerland
基金
欧洲研究理事会;
关键词
Ferroelectric; domain walls; nanoelectronics; improper ferroelectricity; alternating current;
D O I
10.1021/acs.nanolett.1c03182
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The direct current (dc) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual dc conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multilevel data storage, and synaptic devices. In contrast to the functional dc behaviors at charged walls, their response to alternating currents (ac) remains to be resolved. Here, we reveal ac characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced nonlinear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the ac drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in ac circuitry.
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页码:9560 / 9566
页数:7
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