Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source

High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (eta) of the InGaP is investigated as a function of the growth temperature. eta is as low as 0.22 and almost insensitive to the growth temperature below 460 degreesC. It increases abruptly around 475 degreesC and has a maximum value of 0.35 at approximate to 490 degreesC. Double crystal X-ray diffraction and a low-temperature photoluminescence spectrum reveal that the present growth method is robust and provides better quality InGaP compared to other state-of-the-art growth technologies.