Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine

The feasibility of preparing device quality InGaP/GaAs heterostructures by the gas source molecular beam epitaxial (GSMBE) growth using tertiarybutylphosphine (TBP) was investigated. Undoped and Si doped InGaP layers with GaAs buffer layers as well as InGaP/GaAs quantum well (QW) samples were grown and characterized by atomic force microscopy (AFM), photoluminescence (PL) and Hall measurements. All of the undoped and doped InGaP layers showed narrow PL peaks and electron mobilities comparable to those reported for InGaP layers grown by other methods. Undoped samples showed a residual carrier concentration of 1 x 10(15) cm(-3) and a mobility of 3300 cm(2)/V s at room temperature. In the Si-doped samples, the highest electron density of 2 x 10(19) cm(-3) was achieved without carrier saturation. On the other hand, InGaP/GaAs QW samples showed intense and cm narrow PL emission lines, indicating formation of sharp heterointerfaces. (C) 1999 Elsevier Science Ltd. All rights reserved.