Fluctuations and Relaxation in Graphene

被引：0
|
作者：
Ferry, D. K. [1 ]
Liu, B. [1 ]
Akis, R. [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As semiconductor devices continue to get smaller, it is clear that quantum effects will begin to play a larger role in their behavior. Phase interference and the energy it taxation via electron-electron interactions are key quantum effects which can occur in small devices. These are studied best at low temperature where other processes are quenched. Here, we discuss these effects in graphene.
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