Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context

被引：2
|
作者：
Letailleur, L. [1 ]
Villegas, M. [1 ]
Al Hajjar, A. [2 ]
Kacou, C. Edoua [2 ]
机构：
[1] Univ Gustave Eiffel, CNRS, ESYCOM, F-77454 Marne La Vallee, France
[2] OMMIC SAS, FR-94450 Limeil Brevannes, France
来源：
2022 14TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ (GSMM 2022) | 2022年
关键词：
Low Noise Amplifier; Millimeter Wave; Integrated Circuit; GaN; GaAs; Receiver; 5G mmWave;
D O I：
10.1109/GSMM53818.2022.9792324
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comparative performance analysis of LNAs realized in GaAs and GaN/Si technologies in the context of 5G mmWave massive MIMO transceiver. Regardless the choice of architecture for beamforming, a key component of the base station transmitter is the RF frontend. In this paper, we investigate the linear and nonlinear performance in a gain/noise/linearity trade-off for the LNA. The circuits are fabricated using OMMIC technologies and characterized on board over the 24-30 GHz frequency band. Measurements demonstrate that it is interesting to use a GaN in a frontend thanks to its additional advantages in terms of linearity.
引用
收藏
页码：9 / 11
页数：3
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