Reduced Capacitor Stress One Switched-Inductor Improved Z-Source Inverter

被引:0
|
作者
Jagan, Vadthya [1 ]
Das, Sharmili [1 ]
Bhaskar, Vadthya [2 ]
机构
[1] Indian Inst Technol Roorkee, Dept Elect Engn, Roorkee 247667, Uttar Pradesh, India
[2] Vignan Inst Technol & Sci, Dept Elect & Elect Engn, Hyderabad 508218, Andhra Pradesh, India
关键词
ZSI; Improved-ZSI; SL-ZSI; VL-ZSI; SL-qZSI; Magnetically Coupled Impedance Source (MCIS); One SL-ZSI; VSI; CSI;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes the novel topology of One switched-inductor (SL) improved Z-source inverter (ZSI) with reduced capacitor stress. The voltage boost and components used in the proposed topology are same as the SL-qZSI. Similar to SL-qZSI, this proposed inverter topology provides continuous input current, shares common ground with the supply, and suppresses the inrush current at start-up condition. In addition to that, the stress across the capacitor is less in the proposed topology. The proposed topology provides high voltage boost when compare to traditional ZSI with the addition of one extra inductor and three diodes. The analysis and the derivation of boost factor, switches voltage, diode voltages, and capacitor voltages of the proposed inverter are done and compared with the conventional ZSI, SLZSI, and SL-qZSI. The simulation results of the proposed topology are validated in MATLAB/Simulink.
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页数:6
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