Three-dimensional modeling and evaluation of body tied versus floating body SOI MOSFETs

被引：3

作者：

Varahramyan, K ^{[1
]}

Arshad, S

Maszara, WP

机构：

[1] Louisiana Tech Univ, TCAD Lab, Ruston, LA 71272 USA

[2] Texas Instruments Inc, Dallas, TX 75265 USA

[3] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 45卷 / 01期

关键词：

SOI MOSFET; floating body effects; body tied devices; three-dimensional device modeling;

D O I：

10.1016/S0167-9317(98)00258-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computationally efficient and suitable device model has been determined and applied for three-dimensional (3-D) modeling and evaluation of body tied versus floating body SOI MOSFETs. Quarter micron Partially-Depleted (PD) devices have been considered. The transistor characteristics for the devices have been generated from 3-D device simulations, allowing evaluation of the influence of body ties on floating body effects in PD devices. By overcoming the convergence difficulties encountered in numerical solutions when dealing with floating body problems, the kink occurring in the saturation region of the output current-voltage characteristics of the floating body device, and its reduction and suppression in the devices with various body tie configurations has been determined. The results presented appear to be the first reported attempt at determining the influence of body ties on the kink effect from determination of the output current-voltage characteristics directly obtained from 3-D device simulations. Only DC type floating body effects have been considered in this work. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：29 / 37

页数：9

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