New 2D bismuth oxychalcogenide nanosheets have excellent theoretical properties such as high electronic mobility and excellent oxidation resistance, which have good application prospective for optoelectronic devices. In this paper, during the synthesis process via mild hydrothermal route, ammonium bismuth citrate (C6H13BiN2O7 center dot H2O) is selected as Bi source. Both Bi2O2S and Bi2O2Se nanosheets (lateral size: over 2.0 mu m, thickness: approximate to 5.0 nm) are synthesized successfully using thiourea (CH4N2S) as S source, and sodium selenite (Na2O3Se) as Se source, respectively. The as-synthesized Bi2O2S and Bi2O2Se materials have desirable nanosheet-like morphologies. After adding C6H13BiN2O7 center dot H2O, [(NH3)(2)C6H7O7](3)(-) can intercalate between the interlayers of Bi2O2S or Bi2O2Se, limiting the growth along c-axis direction, so that 2D sheets can be obtained. Finally, the photodetectors are fabricated based on Bi2O2S and Bi2O2Se films coated by thermal spraying. The experimental results show that the maximum responsivity and detectivity of Bi2O2S-based photodetector are 0.059 A W-1 and 6.77 x 10(9) Jones, respectively. As to Bi2O2Se-based photodetector, the maximum responsivity and detectivity can reach 75.14 A W-1 and 3.95 x 10(12) Jones, respectively. The mild hydrothermal synthesis using ammonium bismuth citrate as Bi source is a universal and facile method to obtain Bi2O2S and Bi2O2Se nanosheets for optoelectronic applications.
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Washington State Univ, Dept Chem, Pullman, WA 99163 USAWashington State Univ, Dept Chem, Pullman, WA 99163 USA
Hao, Leiduan
Li, Xiaoyu
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Washington State Univ, Mat Sci & Engn Program, Pullman, WA 99163 USAWashington State Univ, Dept Chem, Pullman, WA 99163 USA
Li, Xiaoyu
Hurlock, Matthew J.
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Washington State Univ, Dept Chem, Pullman, WA 99163 USAWashington State Univ, Dept Chem, Pullman, WA 99163 USA
Hurlock, Matthew J.
Tu, Xinman
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Nanchang Hangkong Univ, Coll Environm & Chem Engn, Key Lab Jiangxi Prov Persistent Pollutants Contro, Nanchang 330063, Jiangxi, Peoples R ChinaWashington State Univ, Dept Chem, Pullman, WA 99163 USA
Tu, Xinman
Zhang, Qiang
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Washington State Univ, Dept Chem, Pullman, WA 99163 USA
Washington State Univ, Mat Sci & Engn Program, Pullman, WA 99163 USAWashington State Univ, Dept Chem, Pullman, WA 99163 USA
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Zhe Xia
Feng-Xin Yu
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Feng-Xin Yu
Shuai-Cheng Lu
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Shuai-Cheng Lu
Ding-Jiang Xue
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Beijing National Laboratory for Molecular Sciences,Key Laboratory of Molecular Nanostructure and Nanotechnology,Institute of Chemistry,Chinese Academy of SciencesWuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Ding-Jiang Xue
Yi-Su He
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Yi-Su He
Bo Yang
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Bo Yang
Chong Wang
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Chong Wang
Rui-Qing Ding
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Rui-Qing Ding
Jie Zhong
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State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of TechnologyWuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
Jie Zhong
Jiang Tang
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Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)Wuhan National Laboratory for Optoelectronics(WNLO) and School of Optical and Electronic Information,Huazhong University of Science and Technology(HUST)
机构:
Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Du, Yong
Cai, Kefeng
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Cai, Kefeng
Shen, Shirleyzhiqi
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CSIRO, Mat Sci & Engn Div, Clayton, Vic 3169, AustraliaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China