High-Speed Parallel Micro-LED Arrays on Si Substrates Based on Via-Holes Structure for Visible Light Communication

In this work, the parallel micro-light-emitting diode (mu LED) arrays based on via-holes structure with various array numbers from 1 x 1 to 6 x 6 are proposed. The photoelectric characteristics and frequency response characteristics of the mu LED arrays under different array numbers are analyzed. The experiment and analysis results show that the -3 dB bandwidth of parallel mu LED arrays based on via-holes structure improves as the number of arrays increases, and this result is attributed to the decrease in device RC time constant. However, the maximum withstand current density of mu LED arrays decreases as the number of arrays increases, and the 1 x 1 mu LED array achieves an extremely high withstand current density of 15.82 kA/cm(2). Among all the arrays, the 3 x 3 mu LED array can reach the highest -3 dB bandwidth of 606 MHz at 7.91 kA/cm(2) under the combined effect of withstand current density and array numbers. Meanwhile, the light output power for 3 x 3 mu LED array is above 15.0 mW. Thiswork sheds light on preparation of high-performance LEDs for visible light communication.