A X-band CMOS power amplifier with on-chip transmission line transformers

被引：0

作者：

Ku, Bon-Hyun ^{[1
]}

Baek, Sang-Hyun ^{[1
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年

关键词：

CMOS power amplifiers; X-band; transmission line transformers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A X-band CMOS power amplifier (PA) has been fabricated using a 0.18-mu m CMOS technology. On-chip transmission line transformers are used as matching elements for output, input, and inter-stage matching. The power amplifier provides the saturated output power of 23.5 dBm and 1-dB gain-compressed output power (P-1dB) is 21 dBm at 8.5 GHz with 3.3 V supply. The gain is 29 dB and power-added-efficiency (PAE) is 19 % at 8.5 GM. Among the reported X/Ku band CMOS power amplifiers, this amplifier has the largest output power.

引用

页码：471 / 474

页数：4

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