Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

被引：11
|
作者：
Kim, D. H. [1 ]
Lee, J. K.
Huh, J. H.
Kim, Y. H.
Kim, G. T.
Roth, S.
Dettlaff-Weglikowska, U.
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 11期
关键词：
doping; p-type; SOCl2; SWCNTs; NETWORKS;
D O I：
10.1002/pssb.201100106
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on SOCl2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2668 / 2671
页数：4
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