Determination of the temporal plasma density above a semiconductor bridge

被引：1
|
作者：
Kim, J
Song, YH
Nam, KS
机构：
[1] Semiconductor Division, Electronics and Commun. Res. Inst., Taejon 305-600
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 15期
关键词：
plasma; semiconductor bridges;
D O I：
10.1049/el:19960899
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method of determining the temporal plasma density above a semiconductor bridge using a microwave resonator probe has been proposed. Experimental results indicate thar the plasma density is observed to increase to a peak value of 4.2 x 10(11) cm(-3) and decay exponentially with time, which is consistent with diffusion dominating the plasma transport.
引用
收藏
页码：1412 / 1413
页数：2
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