Determination of the temporal plasma density above a semiconductor bridge

被引：1
|
作者：
Kim, J
Song, YH
Nam, KS
机构：
[1] Semiconductor Division, Electronics and Commun. Res. Inst., Taejon 305-600
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 15期
关键词：
plasma; semiconductor bridges;
D O I：
10.1049/el:19960899
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method of determining the temporal plasma density above a semiconductor bridge using a microwave resonator probe has been proposed. Experimental results indicate thar the plasma density is observed to increase to a peak value of 4.2 x 10(11) cm(-3) and decay exponentially with time, which is consistent with diffusion dominating the plasma transport.
引用
收藏
页码：1412 / 1413
页数：2
相关论文
共 50 条
  • [1] TEMPORAL MEASUREMENT OF PLASMA-DENSITY VARIATIONS ABOVE A SEMICONDUCTOR BRIDGE (SCB)
    KIM, J
    SCHAMILOGLU, E
    MARTINEZTOVAR, B
    JUNGLING, KC
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1995, 44 (04) : 843 - 846
  • [2] MEASUREMENT OF PLASMA ELECTRON-DENSITY GENERATED BY A SEMICONDUCTOR BRIDGE (SCB)
    KIM, J
    SCHAMILOGLU, E
    MARTINEZTOVAR, B
    JUNGLING, KC
    ELECTRONICS LETTERS, 1994, 30 (07) : 603 - 604
  • [3] Atomic Emission Spectra Diagnosis and Electron Density Measurement of Semiconductor Bridge (SCB) Plasma
    Feng Hongyan
    Zhu Shunguan
    Zhang Lin
    Wan Xiaoxia
    Li Yan
    Shen Ruiqi
    PLASMA SCIENCE & TECHNOLOGY, 2010, 12 (01) : 49 - 52
  • [4] Measurement of plasma density generated by a semiconductor bridge: related input energy and electrode material
    Kim, Jongdae
    Jungling, K.C.
    ETRI Journal, 1995, 17 (02): : 11 - 19
  • [5] Atomic Emission Spectra Diagnosis and Electron Density Measurement of Semiconductor Bridge (SCB) Plasma
    冯红艳
    朱顺官
    张琳
    万晓霞
    李燕
    沈瑞琪
    Plasma Science and Technology, 2010, 12 (01) : 49 - 52
  • [6] Plasma electron density generated by a semiconductor bridge as a function of input energy and land material
    Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
    IEEE Trans Electron Devices, 6 (1022-1026):
  • [7] Plasma electron density generated by a semiconductor bridge as a function of input energy and land material
    Kim, JD
    Nam, KS
    Jungling, KC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) : 1022 - 1026
  • [8] Atomic Emission Spectra Diagnosis and Electron Density Measurement of Semiconductor Bridge (SCB) Plasma
    冯红艳
    朱顺官
    张琳
    万晓霞
    李燕
    沈瑞琪
    Plasma Science and Technology, 2010, (01) : 49 - 52
  • [9] Light Effect in Semiconductor Bridge Plasma Ignition
    Zhang, Lin
    Li, Ningrui
    Wan, Zaoyan
    Zhu, Shunguan
    CENTRAL EUROPEAN JOURNAL OF ENERGETIC MATERIALS, 2017, 14 (04): : 996 - 1006
  • [10] Experimental Study on Plasma Temperature of Semiconductor Bridge
    吴蓉
    朱顺官
    张琳
    李燕
    冯红艳
    Journal of China Ordnance, 2012, (01) : 35 - 40
12345