Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy

被引:106
|
作者
Schaadt, DM [1 ]
Yu, ET
Sankar, S
Berkowitz, AE
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA
关键词
D O I
10.1063/1.123039
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning force microscopy was used to study localized charge deposition and subsequent transport in Co nanoclusters embedded in SiO2 deposited on an n-type Si substrate. Co nanoclusters were charged by applying a bias voltage pulse between tip and sample, and electrostatic force microscopy was used to image charged areas, to determine quantitatively the amount of stored charge, and to characterize the discharging process. Charge was deposited controllably and reproducibly within areas similar to 20-50 nm in radius, and an exponential decay in the peak charge density was observed. Longer decay times were measured for positive than for negative charge; this is interpreted as a consequence of the Coulomb-blockade energy associated with single-electron charging of the Co nanoclusters. (C) 1999 American Institute of Physics. [S0003-6951(99)01803-3].
引用
收藏
页码:472 / 474
页数:3
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