Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires

被引:19
|
作者
Perillat-Merceroz, G. [1 ,2 ]
Thierry, R. [1 ]
Jouneau, P. -H. [2 ]
Ferret, P. [1 ]
Feuillet, G. [1 ]
机构
[1] LETI, CEA, F-38054 Grenoble, France
[2] CEA INAC UJF Grenoble1 UMR E, LEMMA, SP2M, F-38054 Grenoble, France
关键词
THREADING DISLOCATIONS; EPITAXIAL MULTILAYERS; MISFIT DISLOCATIONS; HETEROSTRUCTURES; DEFECTS; GROWTH;
D O I
10.1063/1.4704927
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plastic relaxation of the misfit stress in core-shell semi-conducting nanowires can lead to structural defects, detrimental to applications. Core-shell Zn0.7Mg0.3O/ZnO quantum well heterostructures were deposited on ZnO nanowires. Strain along the a and c axes of the wurtzite structure is relaxed through the glide of dislocation half-loops from the free surfaces, within pyramidal and prismatic planes. Some half-loops are closed up in the barriers to accommodate the misfit at two consecutive interfaces of the quantum well stack. Dislocations are also observed within the nanowire core: contrary to two-dimensional structures, both the core and the shell can be plastically relaxed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704927]
引用
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页数:4
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