Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination

被引：4

作者：

Okada, Masaya ^{[1
]}

Ito, Hideki ^{[1
]}

Ao, Jin-Ping ^{[1
]}

Ohno, Yasuo ^{[1
]}

机构：

[1] Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

AlGaN/GaN HFET; threshold voltage; illumination; SRH statistics; deep trap; spectrum dependency;

D O I：

10.1143/JJAP.47.2103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is found that AlGaN/GaN heterostructure field-effect transistor (HFET) drain current increases under illumination at a photon energy of 2.92 eV, lower than the bandgap energy. Analysis with Shockley-Read-Hall (SRH) statistics for deep traps indicates that the electron generation from deep traps in the buffer layer is responsible for the shift. The trap energy is identified that from the conduction band. High resistivity buffer layers compensated by deep traps, which are often required for high frequency applications, give larger threshold voltage variation.

引用

页码：2103 / 2107

页数：5

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