Thermal investigation of high power optical devices by transient testing

被引：96
|
作者：
Farkas, G [1 ]
Vader, QV
Poppe, A
Bognár, G
机构：
[1] MicReD Ltd, H-1112 Budapest, Hungary
[2] Univ Budapest Technol & Econ, Dept Electron Devices, H-1521 Budapest, Hungary
[3] Lumileds Lighting BV, NL-5680 AK Best, Netherlands
来源：
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2005年 / 28卷 / 01期
关键词：
light emitting diodes (LEDs); opto-electronic devices; thermal measurement;
D O I：
10.1109/TCAPT.2004.843197
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In case of opto-electronic devices, the power applied LED on the device leaves in a parallel heat and light transport, the interpretation of R-th is not obvious. The paper shows results of a combined optical and thermal measurement for the characterization thermal of power light emitting diodes (LEDs). A model explaining R-th changes at different current levels is proposed.
引用
收藏
页码：45 / 50
页数：6
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