Electronic conduction in SiO2:N thin films grown by thermal oxidation of silicon in N2O

Silicon oxynitride [SiO2:N] thin films have been grown by oxidizing silicon in N2O at 900, 1000 and 1100 degreesC and at 760 and 1520 torr. It is shown that the dominant electrical conduction mechanism, for high electric fields, is the field assisted thermionic emission from the traps (Poole-Frenkel effect), and is not direct or Fowler-Nordheim tunneling, as typically occurs in thermal silicon oxide with similar thickness. Electrical conduction in these films occurs by field assisted electron emission from donor traps with energy levels varying in the range from 0.5 to 1 eV from the conduction band. The results shown here indicate that the best quality films are those grown at low temperature and pressure, since they give films with a higher critical electric field, a higher energy barrier depth at the traps and less donors compensated by acceptors than those grown at high temperatures and pressures. (C) 2003 Elsevier Science B.V. All rights reserved.