Magnetic vortex transistor based tri-state buffer Switch

被引:11
|
作者
Mondal, Sucheta [1 ]
Barman, Saswati [2 ]
Barman, Anjan [1 ]
机构
[1] SN Bose Natl Ctr Basic Sci, Dept Condensed Matter Phys & Mat Sci, Block JD,Sect 3, Kolkata 700106, India
[2] Inst Engn & Management, Dept Basic Sci & Humanities, Salt Lake Elect Complex,Sect 5, Kolkata 700091, India
关键词
Micromagnetic simulation; Magnetic vortex dynamics; Stray field; Coupled magnetic vortices; Magnetic logic device;
D O I
10.1016/j.jmmm.2020.166520
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic vortex transistor and fan-out devices based on carefully coupled magnetic vortices in isolated nanomagnetic disks. Here, we demonstrate a new type of magnetic logic gate based upon asymmetric vortex transistor by using micromagnetic simulation. Depending upon two main features (topology) of magnetic vortex, circulation and polarity, the network can behave like a tri-state buffer. Considering the asymmetric magnetic vortex transistor as a unit, the logic gate has been formed where two such transistors are placed parallel and another one is placed at the output. Magnetic energy given in the input transistors is transferred to the output transistor with giant amplification, due to the movement of antivortex solitons through the magnetic stray field. The loss and gain of energy at the output transistor can be controlled only by manipulating the polarities of the middle vortices in input transistors. Due to the asymmetric energy transfer of the antivortex solitons, we have shown successful fan-in operation in this topologically symmetric system. A tri-state buffer gate with fan-in of two transistors can be formed. This gate can be used as a 'Switch' to the logic circuit and it has technological importance for energy transfer to large scale vortex networks.
引用
收藏
页数:8
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