Electronic structure and field emission from amorphous carbon nitride films

被引：4
|
作者：
Xanthakis, JP [1 ]
机构：
[1] Natl Tech Univ Athens, Dept Elect Engn, GR-15773 Athens, Greece
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 06期
关键词：
Carbon nanotubes - Carbon nitride - Electron emission - Electronic density of states - Electronic structure - Energy gap - Mathematical models;
D O I：
10.1016/S0038-1101(01)00023-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we partly revise our previous model (Appl Phys Lett 1998;73:1874) of field emission from amorphous carbon nitride films a-C:H:N based on more detailed electronic structure calculations. Our revision does not change the basic mechanism for electron emission but concerns the values of the band gap and electron affinity used in the model. Calculations of the density of states and optical functions (Tauc plots) are given, which support these values and which, furthermore, support the nature of the emitting states. Also an alternative mechanism of field enhancement is adopted. A better overall agreement with experiment is obtained. The relevance of this work to emission from carbon nanotubes is also discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：945 / 948
页数：4
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