Wettability effect of graphene-based surfaces on silicon carbide and their influence on hydrophobicity of nanocrystalline cerium oxide films

被引：19
|
作者：
Souza, Jean C. [1 ]
Neckel, Itamar T. [1 ]
Varalda, Jose [1 ]
Ribeiro, Evaldo [1 ]
Schreiner, Wido H. [1 ]
Mosca, Dante H. [1 ]
Sierakowski, Maria-Rita [2 ]
Fernandes, Vilmar [3 ]
Ouerghi, Abdelkarim [4 ]
机构：
[1] Univ Fed Parana, LANSEN, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
[2] Univ Fed Parana, BIOPOL, Dept Quim, BR-81531980 Curitiba, Parana, Brazil
[3] Inst Fed Educ Ciencia & Tecnol Parana, BR-81531990 Curitiba, Parana, Brazil
[4] CNRS, LPN, F-91460 Marcoussis, France
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2015年 / 441卷
关键词：
Epitaxial graphene; CeO2; films; Spectroscopy; Hydrophobicity; MOLECULAR-DYNAMICS SIMULATIONS; EPITAXIAL GRAPHENE; CONTACT-ANGLE; HYBRID; WATER; GRAPHITE;
D O I：
10.1016/j.jcis.2014.10.070
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate the water-repellent ability of graphene-based surfaces stabilized on silicon carbide (SiC) and the nanocrystalline cerium oxide (CeO2) films electrodeposited on them. Water contact angle is revealed strongly dependent on the number of graphene monolayers on SiC, indicating partial permeability of graphene on SiC. Fluctuations in the roughness of textured surfaces as well as variations of oxygen vacancy content in CeO2 electrodeposits are determinant for the hydrophobicity of the interaction between water droplets and nanocrystalline CeO2 electrodeposits on monolayers graphene on SiC. (C) 2014 Elsevier Inc. All rights reserved.
引用
收藏
页码：71 / 77
页数：7
相关论文
共 50 条
  • [31] Room temperature ammonia sensing based on graphene oxide integrated flexible polyvinylidenefluoride/cerium oxide nanocomposite films
    Deshmukh, Kalim
    Pasha, S. K. Khadheer
    POLYMER-PLASTICS TECHNOLOGY AND MATERIALS, 2020, 59 (13): : 1429 - 1446
  • [32] Graphene oxide films for field effect surface passivation of silicon for solar cells
    Vaqueiro-Contrerasa, M.
    Bartlam, C.
    Bonilla, R. S.
    Markevich, V. P.
    Halsall, M. P.
    Vijayaraghavan, A.
    Peaker, A. R.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 187 : 189 - 193
  • [33] Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties
    Jha, Himanshu S.
    Yadav, Asha
    Singh, Mukesh
    Kumar, Shailendra
    Agarwal, Pratima
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (03) : 922 - 928
  • [34] Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties
    Himanshu S. Jha
    Asha Yadav
    Mukesh Singh
    Shailendra Kumar
    Pratima Agarwal
    Journal of Electronic Materials, 2015, 44 : 922 - 928
  • [35] Advanced model for conductivity estimation of graphene-based samples considering interphase effect, tunneling mechanism, and filler wettability
    Zare, Yasser
    Rhee, Kyong Yop
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2022, 108 : 81 - 87
  • [36] Influence of Surface Chemical and Topographical Properties on Morphology, Wettability and Surface Coverage of Inkjet-Printed Graphene-Based Materials
    Salaoru, Iulia
    Morris, Dave
    Ware, Ecaterina
    Manjunatha, Krishna Nama
    MICROMACHINES, 2024, 15 (06)
  • [37] Effect of repetitive strain on the electrical durability of graphene-based, flexible, transparent, conductive films
    Byeong-Joo Lee
    Goo-Hwan Jeong
    Journal of the Korean Physical Society, 2013, 62 : 263 - 268
  • [38] Effect of repetitive strain on the electrical durability of graphene-based, flexible, transparent, conductive films
    Lee, Byeong-Joo
    Jeong, Goo-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (02) : 263 - 268
  • [39] Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide
    V. A. Smirnov
    A. D. Mokrushin
    V. P. Vasiliev
    N. N. Denisov
    K. N. Denisova
    Applied Physics A, 2016, 122
  • [40] Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide
    Smirnov, V. A.
    Mokrushin, A. D.
    Vasiliev, V. P.
    Denisov, N. N.
    Denisova, K. N.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (05):
12345