Size control and phonon confinement of silicon nanowires synthesized by laser ablation

Size control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with nickel (Ni) as catalysts were investigated, The diameter of SiNWs decreased with decreasing synthesis temperature and content of Ni catalyst. Gradual down shift and asymmetric broadening of Si optical phonon peak depending on the diameter of SiNWs were observed for continuously, thermally oxidized SiNWs and SiNWs with smaller diameters formed at lower temperature. This can be interpreted by the phonon confinement effect. On the other hand, further thermal oxidation produced an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the surface oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.