Impurity doping in silicon nanowires synthesized by laser ablation

被引：10

作者：

Fukata, N. ^{[1
,2
]}

Matsushita, S. ^{[3
]}

Okada, N. ^{[3
]}

Chen, J. ^{[4
]}

Sekiguchi, T. ^{[4
]}

Uchida, N. ^{[3
]}

Murakami, K. ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] PRESTO JST, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[4] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1007/s00339-008-4699-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron (B) or phosphorus (P) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B were observed in B-doped SiNWs by micro-Raman scattering measurements at room temperature. Fano broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak for B-doped SiNWs. An electron spin resonance signal due to conduction electrons was observed only for P-doped SiNWs. These results prove that B and P atoms were doped in substitutional sites of the crystalline Si core of SiNWs during laser ablation and electrically activated in the sites.

引用

页码：589 / 592

页数：4

共 50 条

[1] Impurity doping in silicon nanowires synthesized by laser ablation
N. Fukata
S. Matsushita
N. Okada
J. Chen
T. Sekiguchi
N. Uchida
K. Murakami
[J]. Applied Physics A, 2008, 93 : 589 - 592
[2] Phonon confinement and impurity doping in silicon nanowires synthesized by laser ablation
Fukata, N.
Oshima, T.
Okada, N.
Matsushita, S.
Tsurui, T.
Chen, J.
Sekiguchi, T.
Murakami, K.
[J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 553 - +
[3] Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation
Fukata, N.
Chen, J.
Sekiguchi, T.
Okada, N.
Murakami, K.
Tsurui, T.
Ito, S.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (20)
[4] Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation
Fukata, N.
Chen, J.
Sekiguchi, T.
Matsushita, S.
Oshima, T.
Uchida, N.
Murakami, K.
Tsurui, T.
Ito, S.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (15)
[5] Synthesis of silicon nanoparticles and impurity doping by laser ablation
Murakami, K
Makimura, T
Mizuta, T
Li, CQ
Takeuchi, D
[J]. LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING VI, 2001, 4274 : 222 - 231
[6] Impurity Doping in Silicon Nanowires
Fukata, Naoki
[J]. ADVANCED MATERIALS, 2009, 21 (27) : 2829 - 2832
[7] Phonon confinement in silicon nanowires synthesized by laser ablation
Fukata, N
Oshima, T
Okada, N
Kizuka, T
Tsurui, T
Ito, S
Murakami, K
[J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 864 - 867
[8] Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation
Fukata, N.
Mitome, M.
Bando, Y.
Seoka, M.
Matsushita, S.
Murakami, K.
Chen, J.
Sekiguchi, T.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (20)
[9] Si nanowires synthesized from silicon monoxide by laser ablation
Tang, YH
Zhang, YF
Wang, N
Shi, WS
Lee, CS
Bello, I
Lee, ST
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (01): : 317 - 319
[10] Phonon confinement effect of silicon nanowires synthesized by laser ablation
Fukata, N
Oshima, T
Murakami, K
Kizuka, T
Tsurui, T
Ito, S
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3

← 1 2 3 4 5 →