Optimization of the 65-nm CMOS Linear Front-End Circuit for the CMS Pixel Readout at the HL-LHC

被引:3
|
作者
Gaioni, L. [1 ,2 ]
Manghisoni, M. [1 ,2 ]
Ratti, L. [2 ,3 ]
Re, V [1 ,2 ]
Riceputi, E. [1 ,2 ]
Traversi, G. [1 ,2 ]
Dellacasa, G. [4 ]
Demaria, N. [4 ]
Garbolino, S. [4 ]
Rotondo, F. [4 ]
机构
[1] Univ Bergamo, Dipartimento Ingn & Sci Applicate, I-24044 Dalmine, Italy
[2] Ist Nazl Fis Nucl, Sez Pavia, I-27100 Pavia, Italy
[3] Univ Pavia, Dipartimento Ingn Ind & Informaz, I-27100 Pavia, Italy
[4] Ist Nazl Fis Nucl, Sez Torino, I-10125 Turin, Italy
关键词
CMOS front-end electronics; high-luminosity large hadron collider (HL-LHC); ionizing radiation effects; low-noise analog front-end; pixel readout chip;
D O I
10.1109/TNS.2021.3117666
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The linear front-end is the analog processor chosen for the final integration into the pixel readout chip for the high-luminosity upgrade of the CMS experiment at the large hadron collider. The front-end has been included in the RD53A chip, designed by the CERN RD53 collaboration and submitted in 2017. An optimized version of the front-end has been designed, submitted, and tested in the framework of the RD53B developments. The optimization is mainly concerned with the time-walk performance of the front-end and with its threshold tuning capabilities. The article describes in detail such design improvements together with the results from the characterization of a small prototype chip including a 16 x 16 pixel matrix featuring both the RD53A and RD53B versions of the front-end. Test results show a significant reduction, about 10 ns for input signals close to the threshold, of the time-walk in the RD53B front-end, featuring a threshold dispersion smaller than 65 electrons r.m.s. after exposure to a total ionizing dose of 1 Grad of X-rays.
引用
收藏
页码:2682 / 2692
页数:11
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