Modification of graphite surface layers by nitrogen ion irradiation

被引:11
|
作者
Bogomolova, LD
Borisov, AM
Kurnaev, VA
Mashkova, ES [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119992, Russia
[2] Moscow Engn Phys Inst, Moscow 115409, Russia
关键词
high-dose ion bombardment; ion-electron emission; electron paramagnetic resonance;
D O I
10.1016/S0168-583X(03)01730-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
To study the modified surface layer of polycrystalline graphite MPG-8 (produced by NIIGraphite, Moscow, Russia) under high-fluence irradiation by 30 keV N-2(+) ions, electron paramagnetic resonance (EPR) spectra of surface layer and the dependence of the ion-electron emission yield gamma on the target temperature have been measured. The dependence of gamma(T) manifests a step-like behaviour at the temperature T-a, which is typical of the radiation-induced phase transition. The EPR analysis shows that below T-a, which corresponds to annealing of radiation damage created by ion bombardment, paramagnetic defects are typical of carbon as well as defects connected with bonding of the carbon atom with three N-14 nuclei. Above T-a, the defects are typical of graphite-like structures. The results for MPG-8 are compared with those for MPG-LT and POCO-AXF-5Q graphites published earlier. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:164 / 168
页数:5
相关论文
共 50 条
  • [41] Nanoscale modification of electronic states of graphite by highly charged Ar-ion irradiation
    Meguro, T
    Hida, A
    Suzuki, M
    Koguchi, Y
    Takai, H
    Yamamoto, Y
    Maeda, K
    Aoyagi, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2745 - 2748
  • [42] INSITU EELS OBSERVATION OF GRAPHITE STRUCTURE MODIFICATION DUE TO HYDROGEN-ION IRRADIATION
    KUSHITA, KN
    HOJOU, K
    ULTRAMICROSCOPY, 1991, 35 (3-4) : 289 - 293
  • [43] Surface nitridation of amorphous carbon by nitrogen ion beam irradiation
    Iwasaki, C
    Aono, M
    Kitazawa, N
    Watanabe, Y
    SURFACE ENGINEERING 2004 - FUNDAMENTALS AND APPLICATIONS, 2005, 843 : 209 - 214
  • [44] Conductive surface modification of LiFePO4 with nitrogen-doped carbon layers for lithium-ion batteries
    Yoon, Sukeun
    Liao, Chen
    Sun, Xiao-Guang
    Bridges, Craig A.
    Unocic, Raymond R.
    Nanda, Jagjit
    Dai, Sheng
    Paranthaman, M. Parans
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (11) : 4611 - 4614
  • [45] Facile conductive surface modification of Si nanoparticle with nitrogen-doped carbon layers for lithium-ion batteries
    Kammari Sasidharachari
    Byung-Ki Na
    Sang-Gil Woo
    Sukeun Yoon
    Kuk Young Cho
    Journal of Solid State Electrochemistry, 2016, 20 : 2873 - 2878
  • [46] Penning ion source based surface modification of titanium by nitrogen ion implantation
    Murtaza, Ghulam
    Siddique, Muhammad Tariq
    Shakeel-ur-Rehman
    Qayyum, A.
    Shah, Attaullah
    Shah, S. I. W.
    PHYSICA SCRIPTA, 2024, 99 (01)
  • [47] Facile conductive surface modification of Si nanoparticle with nitrogen-doped carbon layers for lithium-ion batteries
    Sasidharachari, Kammari
    Na, Byung-Ki
    Woo, Sang-Gil
    Yoon, Sukeun
    Cho, Kuk Young
    JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2016, 20 (10) : 2873 - 2878
  • [48] Effects of deformation on surface modification by nitrogen ion-implantation
    Yamamoto, A
    Tsubakino, H
    Ando, M
    Liu, L
    Terasawa, M
    Mitamura, T
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 341 - 344
  • [49] Modification of Teflon surface by proton microbeam and nitrogen ion beam
    Kitamura , Akane
    Satoh, Takahiro
    Koka, Masashi
    Kamiya, Tomihiro
    Kobayashi, Tomohiro
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 314 : 82 - 85
  • [50] ION CHANNELING STUDIES OF REGROWTH KINETICS OF DISORDERED SURFACE-LAYERS ON GRAPHITE
    VENKATESAN, T
    ELMAN, BS
    BRAUNSTEIN, G
    DRESSELHAUS, MS
    DRESSELHAUS, G
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) : 3232 - 3240