Modeling of Exploration of Reversible Contrast Enhancement Layers for Double Exposure Lithography

被引:0
|
作者
Shao, Feng [1 ,2 ]
Cooper, Gregory D. [3 ]
Chen, Zhiyun [3 ]
Erdmann, Andreas [1 ,2 ]
机构
[1] Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany
[2] Erlangen Grad Sch Adv Opt Technol, Erlangen, Germany
[3] Pexelligent Technol LLC, College Pk, MD 20742 USA
来源
关键词
lithography simulation; double exposure; reversible contrast enhancement layer; optical nonlinearity; SEMICONDUCTOR; ABSORPTION; SHIFT;
D O I
10.1117/12.846525
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper discusses the modeling of reversible contrast enhancement layers (RCEL) for advanced optical lithography. An efficient implementation of the Waveguide method is employed to investigate the process capability of RCEL and to identify the most appropriate material and exposure parameters. It is demonstrated that the consideration of near field diffraction effects and of bleaching dynamics is important to achieve correct results. A large refractive index of the resist and the RCEL improves the achievable lithographic performance. It is shown that RCEL layers can be used to enhance the performance of a NA=0.6 scanner to create a high contrast images with a pitch of 80nm.
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页数:12
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