Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

被引：21
|
作者：
Danneville, F [1 ]
Dambrine, G [1 ]
Cappy, A [1 ]
机构：
[1] Inst Elect & Microlect Nord, UMR CNRS 9929, F-59652 Villeneuve Dascq, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 10期
关键词：
conversion matrix; FET mixer; impedance field method; noise correlation matrix; noise modeling; nonlinear device (large signal);
D O I：
10.1109/16.725255
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to present a noise model which predicts the noise performance of MESFET and HEMT mixers. The conversion and noise correlation matrices of FET mixer are calculated using a uniform nonlinear noisy active line concept to describe the FET. This calculation is based on a perturbation analysis of the large-signal noiseless steady state, making it a "microscopic nonlinear noise model." This method is applied to the case of a hot HEMT gate mixer and we show that the theoretical results are in agreement with experimental data.
引用
收藏
页码：2207 / 2212
页数：6
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