Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

被引：21

作者：

Danneville, F ^{[1
]}

Dambrine, G ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Inst Elect & Microlect Nord, UMR CNRS 9929, F-59652 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 10期

关键词：

conversion matrix; FET mixer; impedance field method; noise correlation matrix; noise modeling; nonlinear device (large signal);

D O I：

10.1109/16.725255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this paper is to present a noise model which predicts the noise performance of MESFET and HEMT mixers. The conversion and noise correlation matrices of FET mixer are calculated using a uniform nonlinear noisy active line concept to describe the FET. This calculation is based on a perturbation analysis of the large-signal noiseless steady state, making it a "microscopic nonlinear noise model." This method is applied to the case of a hot HEMT gate mixer and we show that the theoretical results are in agreement with experimental data.

引用

页码：2207 / 2212

页数：6

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