High frequency pulse generation using a gain-switched commercial semiconductor laser with strong external injection

被引：0
|
作者：
Anandarajah, P [1 ]
Kaszubowska, A [1 ]
Barry, LP [1 ]
机构：
[1] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland
来源：
2000 HIGH FREQUENCY POSTGRADUATE STUDENT COLLOQUIUM | 2000年
关键词：
D O I：
10.1109/HFPSC.2000.874094
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we experimentally demonstrate how strong external-injection into a commercial semiconductor diode increases the laser bandwidth such that gain-switched pulses can be generated at frequencies upto 20 GHz (which is far in excess of the lasers inherent bandwidth). The optical pulses generated have pulse widths around 15 ps, and spectral widths of 35 GHz, giving a time-bandwidth product of 0.52, which is close to the transform limit for gaussian pulses.
引用
收藏
页码：121 / 126
页数：6
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