Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

被引：8
|
作者：
Ramirez-Porras, A. [1 ,2 ]
Garcia, O. [2 ,3 ]
Vargas, C. [2 ]
Corrales, A. [2 ,3 ]
Solis, J. D. [2 ]
机构：
[1] Univ Costa Rica, Ctr Invest Ciencia & Ingn Mat CICIMA, San Pedro 11501, Costa Rica
[2] Univ Costa Rica, Escuela Fis, San Pedro 11501, Costa Rica
[3] Univ Costa Rica, Escuela Quim, San Pedro 11501, Costa Rica
来源：
APPLIED SURFACE SCIENCE | 2015年 / 347卷
关键词：
Quantum confinement; Porous silicon; Quantum dots; Quantum wires; Localized states; POROUS SILICON; LUMINESCENCE; PHOTOLUMINESCENCE; SI;
D O I：
10.1016/j.apsusc.2015.04.129
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models. (C) 2015 Elsevier B.V. All rights reserved.
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页码：471 / 474
页数：4
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