16 x 8 quantum dot array operation at cryogenic temperatures

被引：9

作者：

Lee, Noriyuki ^{[1
]}

Tsuchiya, Ryuta ^{[1
]}

Kanno, Yusuke ^{[1
]}

Mine, Toshiyuki ^{[1
]}

Sasago, Yoshitaka ^{[1
]}

Shinkai, Go ^{[1
]}

Mizokuchi, Raisei ^{[2
]}

Yoneda, Jun ^{[3
]}

Kodera, Tetsuo ^{[2
]}

Yoshimura, Chihiro ^{[1
]}

Saito, Shinichi ^{[1
]}

Hisamoto, Digh ^{[1
]}

Mizuno, Hiroyuki ^{[1
]}

机构：

[1] Hitachi Ltd, Res & Dev Grp, Kokubunji, Tokyo 1858601, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[3] Tokyo Inst Technol, Tokyo Tech Acad Super Smart Soc, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SC期

关键词：

quantum computing; semiconductor devices; silicon-on-insulator; silicon; field effect transistors; quantum dots; LSI circuits; CMOS; GATE; QUBIT;

D O I：

10.35848/1347-4065/ac4c07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a 16 x 8 quantum dot array and CMOS circuit hybrid chip (Q-CMOS). By optimizing the transistor design of Q-CMOS formed by fully depleted (FD)-SOI, it is possible to selectively control each of 16 x 8 quantum dots, and obtained characteristics of quantum dot variation for the first time. Due to the mesoscopic effect, the variation in the characteristics of the quantum dots is larger than the threshold voltage variation of the transistors. Thus, we have obtained an important finding that it is necessary to suppress the variability in order to realize a large-scale quantum computer. We have also confirmed that the characteristics of the quantum dots change depending on the applied gate voltages.

引用

页数：5

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