Mechanical stress of the electrical performance of polycrystalline-silicon resistors

被引:2
|
作者
Nakabayashi, N
Ohyama, H
Simoen, E
Ikegami, M
Claeys, C
Kobayashi, K
Yoneoka, M
Miyahara, K
机构
[1] Mitsubishi Electr Corp, Kumamoto 8611197, Japan
[2] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[3] IMEC, B-3001 Louvain, Belgium
[4] Kumamoto Univ, Kumamoto 8608555, Japan
关键词
D O I
10.1557/JMR.2001.0354
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped films of 250 nm thickness, which were deposited by low-pressure chemical vapor deposition at 620 degreesC on thermally oxidized silicon wafers. The film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2x10(14) and 5.3x10(14) cm(-2), respectively. The Poly-Si films were annealed in a N-2 ambient at 1000 degreesC for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.
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页码:2579 / 2582
页数:4
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