Simulation of the slow-axis beam properties of broad-area lasers and its use in the development of high-brightness sources

被引：0
|
作者：
Holly, Carlo [1 ]
McDougall, Stewart [1 ]
机构：
[1] TRUMPF Photon Inc, 2601 Route 130 South, Cranbury, NJ 08512 USA
来源：
PROCEEDINGS OF THE 2019 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2019年
关键词：
Semiconductor Lasers; Diode Lasers; Lasers; Simulation; Modeling; Broad-Area; Gain-Guided; Index-Guided; Thermal Lens; Beam Propagation Method; Frequency Domain;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The objective of this work is to demonstrate that the slow-axis beam properties of broad -area diode lasers can be predicted by numerical modeling and that the results guide design decisions in the semiconductor laser development. We present a numerical study for 6 different semiconductor laser single emitter designs and compare the computed results to experimental values. The devices differ in width of the contact opening, cavity length, position and depth of an index trench, and facet reflectivity.
引用
收藏
页码：41 / 42
页数：2
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