Simulation of the slow-axis beam properties of broad-area lasers and its use in the development of high-brightness sources

被引：0
|
作者：
Holly, Carlo [1 ]
McDougall, Stewart [1 ]
机构：
[1] TRUMPF Photon Inc, 2601 Route 130 South, Cranbury, NJ 08512 USA
来源：
PROCEEDINGS OF THE 2019 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2019年
关键词：
Semiconductor Lasers; Diode Lasers; Lasers; Simulation; Modeling; Broad-Area; Gain-Guided; Index-Guided; Thermal Lens; Beam Propagation Method; Frequency Domain;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The objective of this work is to demonstrate that the slow-axis beam properties of broad -area diode lasers can be predicted by numerical modeling and that the results guide design decisions in the semiconductor laser development. We present a numerical study for 6 different semiconductor laser single emitter designs and compare the computed results to experimental values. The devices differ in width of the contact opening, cavity length, position and depth of an index trench, and facet reflectivity.
引用
收藏
页码：41 / 42
页数：2
相关论文
共 45 条
  • [1] Design considerations for high-brightness diffractive broad-area lasers
    Büttner, A
    Zeitner, UD
    Kowarschik, R
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2005, 22 (04) : 796 - 806
  • [2] High-brightness broad-area diode lasers with enhanced self-aligned lateral structure
    Elattar, M.
    Brox, O.
    Della Casa, P.
    Maassdorf, A.
    Martin, D.
    Wenzel, H.
    Knigge, A.
    Crump, P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (09)
  • [3] High-brightness broad-area lasers with high reliability for Yb-Er-fiber pumping applications
    Mohrdiek, S
    Brovelli, LR
    Burkhard, M
    Harder, CS
    Jakubowicz, A
    Patrick, W
    Williams, EJ
    Oosenbrug, A
    IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 48 - 55
  • [4] Focusing properties of high brightness gain tailored broad-area semiconductor lasers
    O'Callaghan, JR
    Houlihan, J
    Voignier, V
    Huyet, G
    McInerney, JG
    Corbett, B
    O'Brien, PA
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (01) : 9 - 11
  • [5] High-brightness 95-μm Broad-area 915nm Lasers with 29.4W COMD Power
    Hu, M.
    Wang, W. M.
    Kuang, L. X.
    Miao, C. Y.
    Ho, J.
    He, L. M.
    Liu, W. B.
    Zhao, C. Z.
    Qiu, B. C.
    2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2016,
  • [6] High brightness narrow-stripe broad-area diode lasers at 976 nm
    Li, Yi
    Du, Weichuan
    Zhou, Kun
    Kang, Junjie
    Gao, Songxin
    Wu, Deyong
    Hu, Yao
    Zhang, Liang
    Tan, Hao
    Tang, Chun
    FIFTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION, 2019, 11023
  • [7] Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers
    Eckstein, Hans-Christoph
    Zeitner, Uwe D.
    Ahmed, Kemal
    Schmid, Wolfgang
    Strauss, Uwe
    NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953
  • [8] Control of slow axis mode behavior with waveguide phase structures in semiconductor broad-area lasers
    Eckstein, Hans-Christoph
    Zeitner, Uwe D.
    Schmid, Wolfgang
    Strauss, Uwe
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VIII, 2009, 7230
  • [9] Methods for slow axis beam quality improvement of high power broad area diode lasers
    An, Haiyan
    Xiong, Yihan
    Jiang, Ching-Long
    Schmidt, Berthold
    Treusch, Georg
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XII, 2014, 8965
  • [10] Fast-to-slow axis mode imaging for brightness enhancement of a broad-area laser diode array
    Jones, Andrew M.
    Gopinath, Juliet T.
    OPTICS EXPRESS, 2013, 21 (15): : 17912 - 17919
12345