Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

被引：17
|
作者：
Shin, SH
Shin, JH
Park, KJ
Ishida, T
Tabata, O
Kim, HH [1 ]
机构：
[1] Doowon Tech Coll, Kyeonggi Do, South Korea
[2] Natl Inst Technol & Qual, Kwachun City, South Korea
[3] Osaka Natl Res Inst, Ikeda, Osaka 563, Japan
来源：
THIN SOLID FILMS | 1999年 / 341卷 / 1-2期
关键词：
indium tin oxide; magnetron sputtering; resistivity;
D O I：
10.1016/S0040-6090(98)01531-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium tin oxide (ITO) thin films are prepared on soda lime glass by a DC magnetron sputtering technique having the unbalanced-magnet structure to escape from surface damages. The material properties are measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a result, the (400) peak as the preferred orientation of [100] direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness and film uniformity with a increase of substrate temperature is improved. The best resistivity is 1.3 x 10(-4) Ohm cm on the position of 4 cm from substrate center. Hall mobility and carrier concentration of the ITO thin films are increased with a rising of temperature. The visible light transmission is around 85% at ITO films of 550 nm thickness. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：225 / 229
页数：5
相关论文
共 50 条
  • [11] CHARACTERISTICS OF TITANIUM DOPED INDIUM TIN OXIDE FILMS DEPOSITED BY MAGNETRON SPUTTERING
    Zienius, Marius
    Laukaitis, Giedrius
    Sepetys, Arvydas
    5TH INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIALS: FUNDAMENTALS AND APPLICATIONS 2014, 2014, : 198 - +
  • [12] Low-resistivity indium tantalum oxide films by magnetron sputtering
    Ju, H
    Hwang, S
    Jeong, CO
    Park, SH
    Choi, JG
    Park, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (01): : 109 - 111
  • [13] Low-resistivity indium tantalum oxide films by magnetron sputtering
    H. Ju
    S. Hwang
    C.-O. Jeong
    S.-H. Park
    J.-G. Choi
    C. Park
    Applied Physics A, 2004, 79 : 109 - 111
  • [14] Structure and internal stress of tin-doped indium oxide and indium-zinc oxide films deposited by DC magnetron sputtering
    Nishimura, Eriko
    Sasabayashi, Tomoko
    Ito, Noribiro
    Sato, Yasushi
    Utsumi, Kentaro
    Yano, Koki
    Kaijo, Akira
    Inoue, Kazuyoshi
    Shigesato, Yuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7806 - 7811
  • [15] Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering
    Choi, SK
    Lee, JI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2043 - 2047
  • [16] A MICROSTRUCTURAL STUDY OF LOW-RESISTIVITY TIN-DOPED INDIUM OXIDE PREPARED BY DC MAGNETRON SPUTTERING
    SHIGESATO, Y
    PAINE, DC
    THIN SOLID FILMS, 1994, 238 (01) : 44 - 50
  • [17] Properties of indium tin oxide on polymer films deposited by low-frequency magnetron sputtering method
    Jung, Sang Kooun
    Kim, Myung Chan
    Sohn, Sang Ho
    Park, Duck Kyu
    Lee, Sung Ho
    Park, Lee Soon
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2006, 459 : 167 - 177
  • [18] Biomedical response of tantalum oxide films deposited by DC reactive unbalanced magnetron sputtering
    Yang, W. M.
    Liu, Y. W.
    Zhang, Q.
    Leng, Y. X.
    Zhou, H. F.
    Yang, P.
    Chen, J. Y.
    Huang, N.
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20): : 8062 - 8065
  • [19] Study of indium tin oxide films deposited on colorless polyimide film by magnetron sputtering
    Shen, Yi
    Feng, Zhaochang
    Zhang, Hanyan
    MATERIALS & DESIGN, 2020, 193
  • [20] Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by dc magnetron sputtering
    Morikawa, H
    Fujita, M
    THIN SOLID FILMS, 1999, 339 (1-2) : 309 - 313
12345