Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well

被引：0
|
作者：
Triques, ALC [1 ]
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, G
机构：
[1] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
[2] Univ Sao Francisco, DFGA, BR-13251900 Itatiba, SP, Brazil
[3] Univ Estadual Campinas, FEE, BR-13083970 Campinas, SP, Brazil
[4] IMEC, B-3001 Louvain, Belgium
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 03期
基金：
巴西圣保罗研究基金会;
关键词：
semiconductor; quantum well; spin polarization;
D O I：
10.1006/spmi.1996.0236
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.
引用
收藏
页码：551 / 554
页数：4
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