Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well

被引：0
|
作者：
Triques, ALC [1 ]
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, G
机构：
[1] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
[2] Univ Sao Francisco, DFGA, BR-13251900 Itatiba, SP, Brazil
[3] Univ Estadual Campinas, FEE, BR-13083970 Campinas, SP, Brazil
[4] IMEC, B-3001 Louvain, Belgium
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 03期
基金：
巴西圣保罗研究基金会;
关键词：
semiconductor; quantum well; spin polarization;
D O I：
10.1006/spmi.1996.0236
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.
引用
收藏
页码：551 / 554
页数：4
相关论文
共 50 条
  • [1] Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells
    Adachi, T
    Ohno, Y
    Matsukura, F
    Ohno, H
    PHYSICA E, 2001, 10 (1-3): : 36 - 39
  • [2] Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser
    Feng, M.
    Holonyak, N., Jr.
    James, A.
    Cimino, K.
    Walter, G.
    Chan, R.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [3] HIGH-QUALITY (111)B GAAS, ALGAAS, ALGAAS/GAAS MODULATION DOPED HETEROSTRUCTURES AND A GAAS/INGAAS/GAAS QUANTUM-WELL
    CHIN, A
    MARTIN, P
    HO, P
    BALLINGALL, J
    YU, TH
    MAZUROWSKI, J
    APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1899 - 1901
  • [4] Electron-spin polarization near the Fermi level in n-type modulation-doped semiconductor quantum wells
    Triques, ALC
    Urdanívia, J
    Iikawa, F
    Maialle, MZ
    Brum, JA
    Borhgs, G
    PHYSICAL REVIEW B, 1999, 59 (12): : R7813 - R7816
  • [5] Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
    Esquivias, I
    Romero, B
    Weisser, S
    Czotscher, K
    Ralston, JD
    Larkins, EC
    Arias, J
    Schonfelder, A
    Mikulla, M
    Fleissner, J
    Rosenzweig, J
    HIGH-SPEED SEMICONDUCTOR LASER SOURCES, 1996, 2684 : 17 - 26
  • [6] Quantum oscillations of spin polarization in a GaAs/AlGaAs double quantum well
    Fernandes dos Santos, L.
    Pusep, Yu. A.
    Villegas-Lelovsky, L.
    Lopez-Richard, V.
    Marques, G. E.
    Gusev, G. M.
    Smirnov, D.
    Bakarov, A. K.
    PHYSICAL REVIEW B, 2012, 86 (12)
  • [7] Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells
    Naik, K. Gopalakrishna
    Rao, K. S. R. K.
    Srinivasan, T.
    Muralidharan, R.
    BULLETIN OF MATERIALS SCIENCE, 2011, 34 (07) : 1645 - 1648
  • [8] Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells
    K. Gopalakrishna Naik
    K. S. R. K. Rao
    T. Srinivasan
    R. Muralidharan
    Bulletin of Materials Science, 2011, 34 : 1645 - 1648
  • [9] HOLE SPIN RELAXATION IN N-MODULATION DOPED QUANTUM-WELLS
    BAYLAC, B
    AMAND, T
    MARIE, X
    DAREYS, B
    BROUSSEAU, M
    BACQUET, G
    THIERRYMIEG, V
    SOLID STATE COMMUNICATIONS, 1995, 93 (01) : 57 - 60
  • [10] SINGLE QUANTUM WELL TRANSISTOR WITH MODULATION DOPED ALGAAS/GAAS/ALGAAS STRUCTURES
    MIYATSUJI, K
    HIHARA, H
    HAMAGUCHI, C
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (01) : 43 - 47
12345