Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

被引：7

作者：

Binh-Tinh Tran ^{[1
]}

Chang, Edward-Yi ^{[1
,2
]}

Lin, Kung-Liang ^{[1
]}

Wong, Yuen-Yee ^{[1
]}

Sahoo, Kartika Chandra ^{[3
]}

Lin, Hsiao-Yu ^{[1
]}

Huang, Man-Chi ^{[1
]}

Hong-Quan Nguyen ^{[1
]}

Lee, Ching-Ting ^{[4
]}

Hai-Dang Trinh ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 11期

关键词：

PHASE-SEPARATION; GAN; SI(111); EPITAXY; LAYERS; INGAN;

D O I：

10.1143/APEX.4.115501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] High quality AlN grown on SiC by metal organic chemical vapor deposition
Chen, Z.
Newman, S.
Brown, D.
Chung, R.
Keller, S.
Mishra, U. K.
Denbaars, S. P.
Nakamura, S.
APPLIED PHYSICS LETTERS, 2008, 93 (19)
[42] Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition
Baskar, K
Soga, T
Jimbo, T
Umeno, M
JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 4112 - 4115
[43] Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition
Zeng, Qing
Chen, Zhaolong
Zhao, Yun
Wei, Tongbo
Chen, Xiang
Zhang, Yun
Yuan, Guodong
Li, Jinmin
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
[44] Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition
Zhen L.
Peng P.
Qiu C.
Zheng B.
Armaou A.
Zhong R.
Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 2020, 34 (10): : 744 - 752
[45] High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition
I. S. Ezubchenko
M. Ya. Chernykh
I. O. Mayboroda
I. N. Trun’kin
I. A. Chernykh
M. L. Zanaveskin
Crystallography Reports, 2020, 65 : 122 - 125
[46] High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition
Ezubchenko, I. S.
Chernykh, M. Ya
Mayboroda, I. O.
Trun'kin, I. N.
Chernykh, I. A.
Zanaveskin, M. L.
CRYSTALLOGRAPHY REPORTS, 2020, 65 (01) : 122 - 125
[47] PREPARATION OF HIGH-QUALITY BARIUM FLUORIDE THIN-FILM BY CHEMICAL-VAPOR-DEPOSITION
SATO, H
SUGAWARA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (6A): : L799 - L801
[48] Photo-Enhanced Acid Chemical Etching of High-Quality Aluminum Nitride Grown by Metal-Organic Chemical Vapor Deposition
Choi, Yong Ha
Baik, Kwang Hyeon
Choi, Rakjun
Oh, Jeongtak
Kim, Jihyun
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (03) : N42 - N46
[49] Epitaxial deposition of NiO film on a cube-textured Ni substrate by metal-organic chemical vapor deposition
Lee, HG
Lee, YM
Shin, HS
Jung, CH
Hong, GW
METALS AND MATERIALS-KOREA, 2000, 6 (06): : 565 - 570
[50] Epitaxial deposition of NiO film on a cube-textured Ni substrate by metal-organic chemical vapor deposition
Hee-Gyoun Lee
Young-Min Lee
Hyung-Sik Shin
Choong-Hwan Jung
Gye-Won Hong
Metals and Materials, 2000, 6 : 565 - 570

← 1 2 3 4 5 →