Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

被引：7

作者：

Binh-Tinh Tran ^{[1
]}

Chang, Edward-Yi ^{[1
,2
]}

Lin, Kung-Liang ^{[1
]}

Wong, Yuen-Yee ^{[1
]}

Sahoo, Kartika Chandra ^{[3
]}

Lin, Hsiao-Yu ^{[1
]}

Huang, Man-Chi ^{[1
]}

Hong-Quan Nguyen ^{[1
]}

Lee, Ching-Ting ^{[4
]}

Hai-Dang Trinh ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 11期

关键词：

PHASE-SEPARATION; GAN; SI(111); EPITAXY; LAYERS; INGAN;

D O I：

10.1143/APEX.4.115501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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