A CMOS low noise amplifier for 5 to 6 GHz wireless applications

被引：0
|
作者：
Subramanian, Viswanathan [1 ]
Spiegel, Solon [2 ]
Eickhoff, Ralf [2 ]
Boeck, Georg [1 ]
机构：
[1] Berlin Univ Technol, Microwave Engn Lab, D-10587 Berlin, Germany
[2] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
2007 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
bandwidth enhancement; stability; CMOS; low noise; wideband; inductive shunt peaking;
D O I：
10.1109/IMOC.2007.4404374
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work demonstrates the design of a wideband low noise amplifier in 0.13 um CMOS technology. Important design aspects, and the influence of bandwidth improving circuit elements on various LNA performance parameters like gain, matching, noise figure, and stability are analyzed. Simulated and measured LNA results are presented. At the centre frequency of 5.5 GHz: the measured LNA performance includes 13.5 dB gain, 3.9 dB noise figure, -9.5 dB and -13.5 dB of input and output return loss, and 1 dB gain compression point at -8.5 dBm input power respectively. From 5 GHz to 6 GHz a gain drop of less than 1 dB and an average noise figure of 4 dB have been measured. Input referred 1 dB gain compression point better than -8.5 dBm is measured over the entire bandwidth. The LNA dissipates 14 mW from a 1.8 V power supply. Active chip area is 0.28 mm(2).
引用
收藏
页码：778 / +
页数：2
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