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- [21] A 1.75dB-NF 25mW 5GHz Transformer-Based Noise-Cancelling CMOS Receiver Front-End 2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 102 - +
- [24] A 0.6/1.2-V 14.1-mW 96.8GHz-to-108.5GHz Transformer-Based PLL with Embedded Phase Shifter in 65-nm CMOS 2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 93 - 96
- [25] A 28 GHz 8-bit Calibration-Free LO-Path Phase Shifter Using Transformer-Based Vector Summing Topology in 40 nm CMOS 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
- [26] A 42mW 26-28 GHz Phased-Array Receive Channel with 12 dB Gain, 4 dB NF and 0 dBm IIP3 in 45nm CMOS SOI 2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 348 - 351
- [27] A 32 GHz 20 dBm-PSAT Transformer-based Doherty Power Amplifier for multi-Gb/s 5G Applications in 28 nm Bulk CMOS 2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2017, : 45 - 48
- [28] A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2020, : 1323 - 1326
- [29] A 7.7∼10.3GHz 5.2mW-247.3dB-FOM Fractional-N Reference Sampling PLL with 2nd Order CDAC Based Fractional Spur Cancellation In 45nm CMOS 2020 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2020,
- [30] A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm2 Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1283 - 1286